AccuThermo AW610M Basic Configuration:
AccuThermo AW610MMain Frame with wires.
Aluminum chamberwith water cooling and gold plating.
Isolated Quartz TubeWith/without window.
Bottom and top heating with 21(1.2 KW ea, TOP 10 lamps, BOTTOM 11 lamps) Radiation heating lamp module with 6 bank zones .
ZONE( 3 ), TOP Front ( 3 ) lamps
ZONE( 4 ), TOP Center ( 4 ) lamps
ZONE( 5 ), TOP Rear ( 3 ) lamps
ZONE( 6 ), BOTTOM Front ( 4 ) lamps
ZONE( 7 ), BOTTOM Center ( 3 ) lamps
ZONE( 8 ), BOTTOM Rear ( 4 ) lamps
Quartz Trayfor 2 to 4 inch or 4 to 6 inch round (or square) wafer
MFCs:6 gas lineswith 1-6 MFCs. Optional.
Computer Boardwith AW Software, 17” LCD Monitor, Mouse, Standard Keyboard
T Shape Quartzwith TC and one Quartz holder for 100-800°C
One USB with original Software backup
AccuThermo AW610M Specification:
Wafer handling: Manual loading of wafer into the oven, single wafer processing.
Wafer sizes:2″, 3″, 4″ ,5″ , 6″ wafers.
Ramp up rate: Programmable, 10°C to 200°C per second.
Recommended steady state duration and Temperature:0-300 seconds per step. 200°C-1050°C.Typical Maximum 1250°C.
Ramp down rate: Programmable, 10°C to 250°C per second. Ramp down rate is temperature-and-radiation-dependent and the maximum is 125°C per second.
ERP temperature accuracy: ±1°C, when calibrated against an instrumented thermocouplewafer (ITC).
Thermocoupletemperature accuracy: ±0.5°C
Temperature repeatability:±0.5°C or better at 1150°C wafer-to-wafer. (Repetition specifications are based on a 100-wafer set.)
Temperature uniformity:±5°C across a 6″ (150 mm) wafer at 1150°C. (This is a one sigma deviation 100 angstrom oxide.) For a titanium silicide process, no more than 4% increase in non-uniformity during the first anneal at 650°C to 700°C.
Process/Purge gas inputs:Any inert and/or non-toxicgas regulated to 30 PSIG and pre-filtered to 1 micron. Typically, Nitrogen (N2), oxygen (O2), argon (Ar), and/or helium (He) are used.
更多內容可以訪問：AccuThermo AW610M RTP | Allwin21
